InGaAs APD for OTDR
Features
- Small dark current
- Small terminal capacitance
- High speed response
- Detecting area size:50um
- High volt / high multiplication factor
- Coaxial module with single mode fiber (SM-9/125)
Applications
OTDR system/other sensing probe
Absolute Maximum Ratings
| Parameter | Symbol | Min. | Max. | Unit |
| Forward Current | IF | - | 10 | mA |
| Reverse Current | IR | - | 0.5 | mA |
| Operating Case Temp. | TC | -10 | 60 | °C |
| Storage Temperature | TSTG | -40 | 85 | °C |
| Lead Soldering Temp. | TSOL | - | 260(10s) | °C |
| Relative Humidity | RH | 0 | 85 | % |
Optical & Electrical Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes |
| Reverse Breakdown Voltage | VBR | 50 | 55 | - | V | ID = 100 μA |
| Temperature Coefficient of Reverse Breakdown Voltage | δ | - | 0.1 | - | V/°C | - |
| Dark Current | ID | 0.2 | - | 1 | nA | M = 1, 5V |
| Multiplied Dark Current | IDM | - | - | 5 | nA | VR = VBR x 0.98, M > 80 |
| Terminal Capacitance | Ct | - | 0.35 | - | pF | - |
| Multiplication Factor | M | 80 | 100 | - | M | 1550nm,Ipo=0.5uw |
| Cut-off Frequency | fC | 2.5 | - | - | GHz | M = 10 |
| Responsibly | S | 0.85 | 0.90 | - | A/W | λ = 1310 nm, M = 1 |
| 0.90 | 0.95 | - | λ = 1550 nm, M = 1 | |||
| Optical Return Loss | ORL | 30 | 40 | - | dB | SMF |
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